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05-04-2011, 03:01 PM
chip technology businesses Intel and Numonyx announced Wednesday a new technology. The 2 corporations mentioned the new technology will allow breakthrough in NAND flash nonvolatile memory limit of 20 nm, so that method down to five nm,Microsoft Office Standard 2007 (http://www.office2007-key.org/), thus even more price. Intel Fellow and memory technology improvement supervisor, Al Fazio explained to reporters Wednesday,Office 2010 Sale (http://www.office2007key.ca/office-2010-key), the technologies created by stacked memory array might exchange the present DRAM memory and NAND flash memory a number of the operate. This technique even the system designers to place some solid-state memory, DRAM memory and storage properties of some reduced to a memory class. This picture shows phase-change memory built atop a typical CMOS microchip. Memory cells could be controlled utilizing rows and columns of wires that lead by means of the chip. (Credit: Intel) Merely place,Office 2010 Activation (http://www.key-office-2010.de/), this technology can make DRAM memory and storage with a high-speed, high-bandwidth architecture. Even so, this leap is still a lengthy method to go. on Wednesday announced the goods of this technologies need to wait a number of decades to appear. Fazio and Numonyx Greg Atwood, senior technical researcher explained the technological breakthrough referred to as PCMS (phase-change memory and swap) phase alter memory (PCM) technology a phase forward. The fundamental technologies of sulfur within the same group (components) of the object material supplier to generate thin movie memory selector machine control unit,Office 2010 Home And Stude/nt (http://www.office2010-key.us/), and a cross-point architecture mixture of these elements with each other. this new phase-change technologies may perhaps one day get your memory and storage integration being a pleased family members. this new movie called two-way selector change threshold, allowing the layers of memory / selector based on the layer on a CMOS to develop high-density,Office 2010 Activation (http://www.office2010-key.ca/), high-bandwidth PCM memory. this multi-layer stack is the objective. Wednesday introduced a technologies breakthrough is the operate of 64MB can be single-layer edition of this new memory architecture. Intel might be out there this December in Baltimore, Maryland, at the Global Conference on Electronic Gear printed a paper that formally describes the memory architecture. Nonetheless, these multi-layer design of the new memory is at present on the plate. As Atwood said, the first layer is the most tricky .